? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c48 a i c100 t c = 100 c24 a i cm t c = 25 c, 1ms 96 a i a t c = 25c 20 a e as t c = 25c 250 mj ssoa v ge = 15v, t j = 125 c, r g = 5 i cm = 48 a (rbsoa) clamped inductive load @v ce 1200v p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force 20..120/4.5..27 n/lb. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c v isol 50/60 hz rms, t = 1min 2500 v i isol < 1ma, t = 20seconds 3000 v weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 100 a v ge = 0v t j = 125 c 1.5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 20a, v ge = 15v, note 2 3.6 4.2 v t j = 125 c 3.1 v ds99946(02/08) genx3 tm 1200v igbt IXGR24N120C3D1 preliminary technical information v ces = 1200v i c25 = 48a v ce(sat) 4.2v t fi(typ) = 110ns high speed pt igbts for 20-50khz switching g = gate c = collector e = emitter tab = collector isoplus 247 tm (ixgr) isolated tab g c e features ? dcb isolated mounting tab ? meets to-247ad package outline ? high current handling capability ? latest generation hdmos tm process ? mos gate turn-on -drive simplicity ? avalanche rated applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed control ? dc servo and robot drives advantages ? space savings ? easy assembly ? high power density ? very fast switching speeds for high frequency applications
ixys reserves the right to change limits, test conditions, and dimensions. IXGR24N120C3D1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 24a, v ce = 10v, note 2 10 17 s c ies 1620 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 179 pf c res 52 pf q g 79 nc q ge i c = 24a, v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 36 nc t d(on) 16 ns t ri 26 ns e on 1.37 mj t d(off) 93 ns t fi 110 ns e off 0.47 0.85 mj t d(on) 17 ns t ri 37 ns e on 2.90 mj t d(off) 125 ns t fi 305 ns e off 1.18 2.00 mj r thjc 1.00 c/w r thck 0.15 c/w reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v 2.75 v i f = 30a, v ge = 0v t j = 125 c 1.80 v i rm i f = 50a, -di f /dt = 100a/ s, v r = 600v 5.5 11 a t rr v ge = 0v, t j = 100 c 220 ns r thjc 1.5 c/w inductive load, t j = 125 c i c = 20a, v ge = 15v v ce = 600v, r g = 5 note 1 inductive load, t j = 25 c i c = 20a, v ge = 15v v ce = 600v, r g = 5 note 1 notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. isoplus247 (ixgr) outline
? 2008 ixys corporation, all rights reserved IXGR24N120C3D1 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 101214161820222426 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 48a i c = 24a i c = 12a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 48a 24a 12a t j = 25oc fig. 6. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR24N120C3D1 ixys ref: g_24n120c3d1(4n)02-19-08 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 1020304050607080 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 600v i c = 24a i g = 10ma fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 50 55 200 400 600 800 1000 1200 1400 v ce - volts i c - amperes t j = 125oc r g = 5 dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved IXGR24N120C3D1 fig. 15. inductive turn-off switching times vs. gate resistance 200 220 240 260 280 300 320 340 360 4 6 8 101214161820 r g - ohms t f - nanoseconds 80 120 160 200 240 280 320 360 400 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 20a i c = 10a fig. 16. inductive turn-off switching times vs. collector current 20 60 100 140 180 220 260 300 340 380 10 11 12 13 14 15 16 17 18 19 20 i c - amperes t f - nanoseconds 85 90 95 100 105 110 115 120 125 130 t d(off) - nanoseconds t f t d(off ) - - - - r g = 5 , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 90 100 110 120 130 140 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 600v i c = 20a i c = 10a fig. 12. inductive switching energy loss vs. gate resistance 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 4 6 8 101214161820 r g - ohms e off - millijoules 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 20a i c = 10a fig. 13. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 11 12 13 14 15 16 17 18 19 20 i c - amperes e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 e on - millijoules e off e on - - - - r g = 5 , v ge = 15v v ce = 600v i c = 20a i c = 10a
ixys reserves the right to change limits, test conditions, and dimensions. IXGR24N120C3D1 ixys ref: g_24n120c3d1(4n)02-26-08-a fig. 18. inductive turn-on switching times vs. gate resistance 10 15 20 25 30 35 40 45 50 55 60 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 13 14 15 16 17 18 19 20 21 22 23 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 10a i c = 20a fig. 19. inductive turn-on switching times vs. collector current 10 14 18 22 26 30 34 38 42 10 11 12 13 14 15 16 17 18 19 20 i c - amperes t r - nanoseconds 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 10 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 13 14 15 16 17 18 19 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 , v ge = 15v v ce = 600v i c = 10a i c = 20a
? 2008 ixys corporation, all rights reserved IXGR24N120C3D1 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c a/ s a/ s t rr ns t fr z thjc a/ s s 2 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 600v t vj = 100c i f = 30a t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 60a i f = 30a i f = 15a q r i rm i f = 60a i f = 30a i f = 15a t fr v fr t vj =150c t vj =100c t vj = 25c fig. 21. forward current i f versus v f fig. 27. transient thermal resistance junction to case fig. 23. peak reverse current i rm fig. 22. reverse recovery charge q r fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and fig. 24. dynamic parameters q r , i rm time - seconds 0.0001 0.001 0.01 0.1 1 z thjc - k/w 0.001 0.01 0.1 1
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